Charge collection studies of SOI diodes

被引：3

作者：

Colladant, T ^{[1
]}

Ferlet-Cavrois, V

Musseau, O

L'Hoir, A

Campbell, AB

Buchner, S

Knudson, A

McMorrow, D

Fischer, B

Schlögl, M

Lewis, D

机构：

[1] Univ Paris 06, Grp Phys Solides, F-75251 Paris, France

[2] Univ Paris 07, Grp Phys Solides, F-75251 Paris, France

[3] CEA DAM DIF, F-91680 Bruyeres Le Chatel, France

[4] SFA Inc, Largo, MD 20774 USA

[5] GSI Darmstadt, D-64291 Darmstadt, Germany

[6] Univ Bordeaux 1, IXL, F-33405 Talence, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 03期

关键词：

charge collection; heavy ion; pulsed laser; SOI;

D O I：

10.1109/TNS.2002.1039669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge collection measurements on SOI diodes have been performed with heavy ion microbeam and pulsed focused laser. Both irradiation techniques show that no electrical coupling occurs. However, laser measurements show an optical coupling effect when irradiation occurs close to the isolation trench. Qualitative electromagnetic simulations have been performed to confirm and describe the optical coupling.

引用

页码：1372 / 1376

页数：5

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