Electrical determination of the spin relaxation time of photoexcited electrons in GaAs

被引：12

作者：

Kurebayashi, H. ^{[1
]}

Trypiniotis, T. ^{[1
]}

Lee, K. ^{[1
]}

Easton, S. ^{[1
]}

Ionescu, A. ^{[1
]}

Farrer, I. ^{[1
]}

Ritchie, D. A. ^{[1
]}

Bland, J. A. C. ^{[1
]}

Barnes, C. H. W. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium arsenide; hot carriers; III-V semiconductors; iron; spin polarised transport; TRANSPORT;

D O I：

10.1063/1.3291066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin polarization across the interface is found to increase with decreasing temperature. A time-of-flight-type model based on the Dyakonov-Perel (DP) spin relaxation mechanism was employed to explain the temperature dependence, providing that the estimated spin relaxation time in GaAs is 62 ps at 5 K. This short spin relaxation time can be explained by the stronger efficiency of the DP mechanism for hot-electrons.

引用

页数：3

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