Analysis and optimization of substrate noise coupling in single-chip RF transceiver design

被引:5
作者
Koukab, A [1 ]
Banerjee, K [1 ]
Declercq, M [1 ]
机构
[1] Swiss Fed Inst Technol, EPFL, Elect Lab, CH-1015 Lausanne, Switzerland
来源
IEEE/ACM INTERNATIONAL CONFERENCE ON CAD-02, DIGEST OF TECHNICAL PAPERS | 2002年
关键词
D O I
10.1109/ICCAD.2002.1167552
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The relentless move toward single chip integration of RF, analog and digital blocks results in significant noise coupling effects that can degrade performance and hence, should be controlled. In this paper, we propose a practical methodology that uses a suite of commercial tools in combination with a high-speed extractor based on an innovative semi-analytical method to deal with noise coupling problems, and enable RF designers to achieve a fast silicon-success of their chips. The integration of the methodology in a typical RF design flow is illustrated and its successful application to achieve a single-chip integration of a transceiver demonstrated.
引用
收藏
页码:309 / 316
页数:8
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