X-RAY DIFFRACTION ANALYSIS OF QUANTUM CASCADE LASERS

被引：0

作者：

Cheng, Liwei ^{[1
]}

Choa, Ruth ^{[1
]}

Khurgin, Jacob ^{[2
]}

Choa, Fow-Sen ^{[1
]}

Chen, Xing ^{[1
]}

Wang, Xiaojun ^{[3
]}

Fan, Jenyu ^{[3
]}

Chen, Jianxin ^{[4
]}

Gmachl, Claire ^{[4
]}

机构：

[1] Univ Maryland Baltimore Cty, Dept CSEE, Baltimore, MD 21250 USA

[2] Johns Hopkins Univ, Dept ECE, Baltimore, MD 21218 USA

[3] Adtech Opt Inc, City Ind, San Bernardino, CA 91748 USA

[4] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

D O I：

10.1109/ICIPRM.2009.5012507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all >1000 nano-scale superlattice stucture. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.

引用

页码：267 / +

页数：2

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