Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors

被引：9
作者：
da Silva, EF
de Vasconcelos, EA
Freire, VN
机构：
[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil
[2] Univ Fed Ceara, Dept Fis, BR-60433760 Fortaleza, Ceara, Brazil
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 51-2卷
关键词：
dopant passivation; time dependent; defects; SiO2/Si interface;
D O I：
10.1016/S0167-9317(99)00520-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the dopant passivation in p- and n-type Metal-Oxide-Semiconductor capacitors after exposure to high doses of X-ray radiation. Passivation characteristics are analyzed as a function of device size, total dose and time evolution. The results suggest that passivation is influenced by interface charge generated during and after exposure to the radiation. In particular, the interfacial defect generation dynamics suggests that mechanisms associated with tunneling of carriers and/or hydrogen-related species at the SiO2/Si interface may be involved. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：567 / 574
页数：8
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