In Situ Observation of the Degradation in Multi-Crystalline Si Solar Cells by Electroluminescence

Comparison of microstructure (MS), initial electroluminescence (EL) and photoluminescence (PL) images with the strength of LETID effect (detected by EL) from the same location in mc-Si solar cell fabricated in PERC technology. Note the close correspondence of LETID effect with MS and PL and a much worse correlation between MS and EL. In the study, we used EL, PL methods together with capacitance-voltage (CV) and deep-level transient spectroscopy (DLTS) technique to get insight into the roots of LETID. More details can be found in article number by Teimuraz Mchedlidze, Joerg Weber, and co-workers.