Optical properties of ZnS/ZnMgS strained-layer quantum wells

被引：5

作者：

Ichino, K ^{[1
]}

Suzuki, N ^{[1
]}

Kariya, H ^{[1
]}

Ueyama, K ^{[1
]}

Kitagawa, M ^{[1
]}

Kobayashi, H ^{[1
]}

机构：

[1] Tottori Univ, Dept Elect & Elect Engn, Koyama, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

基金：

日本学术振兴会;

关键词：

ZnS; ZnMgS; strain; quantum well; photoluminescence; time-resolved photoluminescence;

D O I：

10.1016/S0022-0248(00)00111-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report optical properties of ZnS/ZnMgS strained-layer single quantum wells. The main photoluminescence (PL) peak from ZnS is attributed to light-hole (LH) free excitons. The emission due to heavy-hole (HH) excitons was also observed. With decreasing well width. these emission lines shift to higher energy owing to quantum confinement. Time-resolved PL spectra suggest rapid relaxation from WH band to LH band in the ZnS well. Localization of excitons in the ZnMgS barrier, which is due to fluctuation of alloy composition, is also suggested. On the other hand, localization of excitons in the ZnS well, caused by the fluctuation of the well width, was hardly observed for the sample with good quality. The LH exciton emission showed fast initial decay time of 16-36 ps, which seems to also depend on the sample quality. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：368 / 372

页数：5

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