Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

被引：32

作者：

Brewster, Megan ^{[1
]}

Schimek, Oliver ^{[2
]}

Reich, Stephanie ^{[2
]}

Gradecak, Silvija ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 20期

基金：

美国国家科学基金会;

关键词：

SCATTERING; NANOCRYSTALS; BAND;

D O I：

10.1103/PhysRevB.80.201314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Frohlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap Eg. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phononscattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at Eg, allowing for the development and optimization of nanowire optoelectronic devices.

引用

页数：4

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