Prediction of Fluctuations in Plasma-Wall Interactions Using an Equipment Engineering System

被引：38

作者：

Fukasawa, Masanaga ^{[1
]}

Kawashima, Atsushi ^{[1
]}

Kuboi, Nobuyuki ^{[1
]}

Takagi, Hitoshi ^{[1
]}

Tanaka, Yasuhito ^{[2
]}

Sakayori, Hiroyuki ^{[2
]}

Oshima, Keiji ^{[1
]}

Nagahata, Kazunori ^{[1
]}

Tatsumi, Tetsuya ^{[1
]}

机构：

[1] Sony Corp, SBG, Semicond Technol Dev Div, Kanagawa 2430014, Japan

[2] Sony Corp, SBG, Qual Reliabil Div, Kanagawa 2430014, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期

关键词：

EMISSION-SPECTRA; ETCH; REGRESSION;

D O I：

10.1143/JJAP.48.08HC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fluctuations in etch rates caused by changes in chamber conditions were studied. Excess deposition of C-F polymer on the chamber wall increased CFx density while H was consumed by the polymer and/or was deactivated on the conductive surface of Si electrodes. The change in radical densities had a clear relationship with the SiN etch rate. The etch rate was accurately predicted by statistical analysis using equipment engineering system (EES) data and optical emission spectroscopy (OES) signals which were extracted by considering both the physical model and the results of statistical analysis. (C) 2009 The Japan Society of Applied Physics

引用

页码：08HC011 / 08HC015

页数：5

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