Ferromagnetism in Cr-doped Ge

被引：47
作者：
Choi, S [1 ]
Hong, SC
Cho, S
Kim, Y
Ketterson, JB
Jung, CU
Rhie, K
Kim, BJ
Kim, YC
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[3] Korea Univ, Dept Phys, Chochiwon 339700, South Korea
[4] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期
关键词：
D O I：
10.1063/1.1516613
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated Cr-doped bulk Ge single crystal using the vertical gradient solidification method. The material shows ferromagnetic ordering at 126 K, as determined from temperature-dependent magnetization and resistance measurements. A sample with x=0.01 was p type with n(h)=3x10(17) cm(-3) at 350 K. The measured magnetic moment per Cr was 0.83mu(B) at 5 K. (C) 2002 American Institute of Physics.
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收藏
页码：3606 / 3608
页数：3
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