Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

被引：8

作者：

Soto, B. ^{[1
]}

Canas, J. ^{[1
,2
]}

Villar, M. P. ^{[1
]}

Araujo, D. ^{[1
]}

Pernot, J. ^{[2
]}

机构：

[1] Univ Cadiz, Dept Ciencia & Mat & QI, Pto Real, Cadiz 11510, Spain

[2] Univ Grenoble Alpes, Inst Neel, CNRS, Grenoble INP, F-38000 Grenoble, France

来源：

关键词：

Diamond; Oxygen termination; Zirconia; Capacitors;

D O I：

10.1016/j.diamond.2021.108745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium dioxide deposited by atomic layer deposition at low temperature (100 degrees C). X-ray diffraction and transmission electron microscopy evidence monoclinic structure and polycrystalline nature of the oxide layer. I-V, C-V and C-F experiments have been performed in a large frequency range, i.e. from 1 Hz to 1 MHz, in order to analyse the electrical properties of the metal/dielectric/diamond stack. The presence of charges in the oxide and interface states induces a flat-band voltage shift in the C-V curve and a strong Fermi level pinning effect. A leakage current mechanism considering the correlation of the microstructural characterization and the electrical response is proposed.

引用

页数：7

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