Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

被引：67

作者：

Tsai, Sung-Lin ^{[1
,2
]}

Hoshii, Takuya ^{[1
]}

Wakabayashi, Hitoshi ^{[1
]}

Tsutsui, Kazuo ^{[3
]}

Chung, Tien-Kan ^{[2
,4
]}

Chang, Edward Y. ^{[2
]}

Kakushima, Kuniyuki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 300, Taiwan

[3] Tokyo Inst Technol, Inst Innovat Res, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan

[4] Natl Chiao Tung Univ, Dept Mech Engn, 1001 Univ Rd, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 08期

关键词：

Ferroelectric films - Reactive sputtering - Aluminum compounds - Nitrogen compounds;

D O I：

10.1063/5.0035335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystallographic characterization and the ferroelectric properties of 50nm-thick sputter-deposited Al0.78Sc0.22N films deposited at room temperature (RT) and 400 degrees C are investigated. c-axis oriented growths were confirmed by x-ray diffraction patterns with rocking curve measurements for both samples. Al0.78Sc0.22N films were found to grow in the c-axis direction and showed poling-free ferroelectric properties, which are advantageous for practical memory and piezoelectric applications. Although the metal-ferroelectric-metal (MFM) capacitors represent low switching cycle endurance, MFM capacitors revealed remnant polarization (P-r) of 70 mu C/cm(2) and 113 mu C/cm(2) for RT- and 400 degrees C-deposited samples, respectively. Ferroelectric films with low-temperature process capability can open a wide range of applications.

引用

页数：5

共 27 条

[1] Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments [J].