Standard and electrically detected magnetic resonance in nanocrystalline silicon

We present results from standard and electrically detected magnetic resonance on nanocrystalline silicon from hot-wire and plasma-enhanced chemical vapour deposition for which the Raman spectra showed the same large crystalline fraction. Based on the fact that dangling bond spin density scales with the sub-band gap absorption coefficient at photon energies < 1.1 eV we suggest the introduction of a calibration factor between the dangling bond spin density and the absorption coefficient. The photocarrier mobility-lifetime product and diffusion length increase with decreasing dangling bond spin density and absorption coefficient. The electrically detected magnetic resonance spectra shows no signal in the dark current and a single line when measured by the spin-dependent photocurrent. The experimentally determined g-value of this line is temperature dependent. The quantum-mechanical spin-pair model explains the electrically detected magnetic resonance signal height. From the spin-pair model we determine microscopic parameters, e.g. singlet-decay rate. (C) 2000 Elsevier Science B.V. All rights reserved.