Experiment and design of near diffraction-limited CW and QCW Yb:YAG microchip lasers

被引：0
|
作者：
Yan, P [1 ]
Wu, HS [1 ]
Gong, ML [1 ]
Liu, Q [1 ]
Cui, RZ [1 ]
Jia, WP [1 ]
机构：
[1] Tsinghua Univ, Dept Precis Instruments, Beijing 100084, Peoples R China
来源：
HIGH-POWER LASERS AND APPLICATIONS II | 2002年 / 4914卷
关键词：
microchip laser; Yb : YAG crystal; M-2; factor; diffraction-limited beam; diode-pumped solid-state laser;
D O I：
10.1117/12.481756
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In order to get diffraction-limited beam by Yb:YAG microchip laser, a simple design rule for laser diode (LD) pumped Yb:YAG laser by using M-2 factor is presented. The validity of this model is demonstrated by LD pumped CW and QCW Yb:YAG microchip laser experiments. High pump intensity and mode matching between pump and lasing are considered in the end-pumped quasi-three-level microchip laser system The pumping intensity distributions in laser chip with different pump beam M-2 factor and different doped crystal are shown. Experimental setup and results of the established LD end-pumped CW and QCW Yb:YAG microchip lasers are presented. Near diffraction-limited beam is achieved with 40% slop efficiency at 1.049mum output wavelength. In QCW mode, 16.4muJ pulse energy with TEM00 mode is measured at the repetition rate of 100Hz. The laser pulse relaxation processing and laser pulse width agree with the theoretical results.
引用
收藏
页码：448 / 455
页数：8
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