A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

被引：237

作者：

Meneghini, Matteo ^{[1
]}

Tazzoli, Augusto ^{[1
]}

Mura, Giovanna ^{[2
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Sardegna Ric, Telemicroscopy Lab, I-09010 Pula, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 01期

关键词：

Degradation; failure analysis; gallium nitride (GaN); light-emitting diode (LED); reliability; LIGHT-EMITTING-DIODES; ELECTRICAL CHARACTERISTICS; DEGRADATION; DIFFUSION; HYDROGEN;

D O I：

10.1109/TED.2009.2033649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of state-of-the-art LED structures are analyzed. In particular, we report recent results concerning the following issues: 1) the degradation of the active layer induced by direct current stress due to the increase in nonradiative recombination; 2) the degradation of LEDs submitted to reverse-bias stress tests; 3) the catastrophic failure of advanced LED structures related to electrostatic discharge events; 4) the degradation of the ohmic contacts of GaN-based LEDs; and 5) the degradation of the optical properties of the package/phosphors system of white LEDs. The presented results provide important information on the weaknesses of LED technology and on the design of procedures for reliability evaluation. Results are compared with literature data throughout the text.

引用

页码：108 / 118

页数：11

共 48 条

[1] Single-quantum well InGaN green light emitting diode degradation under high electrical stress [J].