Relationship between dielectric properties and structural long-range order in (x)Pb(In1/2Nb1/2)O3:(1-x)Pb(Mg1/3Nb2/3)O3 relaxor ceramics

被引:15
作者
Tai, C. W. [1 ]
Baba-Kishi, K. Z.
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
关键词
perovskites; electroceramics; ferroelectricity; transmission electron microscopy (TEM); oxides;
D O I
10.1016/j.actamat.2006.08.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric and structural order-disorder properties of as-sintered complex perovskite (x)Pb(In1/2Nb1/2)O-3:(1-x)Pb(Mg1/3Nb2/3)O-3 ceramics are highly influenced by the quantity of Pb(In1/2Nb1/2)O-3 (PIN). A high PIN quantity causes the relative permittivity maxima (epsilon(max)) to decrease and the temperature (T-max) to increase. Also, strong frequency dispersion is dominant in the relative permittivity when plotted against the temperature. In ferroelectric hysteresis loop measurements, the maximum values of electric displacements (D-max) decrease with increasing PIN. The ceramics in the composition range x = 0.1-0.8 behave as ferroelectric relaxors and exhibit very slim hysteresis loops for all these compositions. Transmission electron microscopy (TEM) studies show that the size of the 1:1 structural ordered domains is influenced by the PIN quantity. The relationship between the dielectric properties and the long-range 1:1 order in these relaxors appear to be in conflict with the commonly accepted order-disorder behavior in complex perovskite ferroelectrics, in which large structural domains correspond with the tendency to depart from the relaxor state. TEM observations show that individual 1:1 ordered domains in (x)PIN:(1 - x)PMN ceramics are composed of numerous nano-sized ordered domains, separated by fine antiphase boundaries. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:5631 / 5640
页数:10
相关论文
共 32 条
[1]   Domain growth in Pb(Mg1/3Ta2/3)O-3 perovskite relaxor ferroelectric oxides [J].
Akbas, MA ;
Davies, PK .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1997, 80 (11) :2933-2936
[2]   Investigation of the lead indium niobate-lead magnesium niobate solid solution [J].
Alberta, EF ;
Bhalla, AS .
MATERIALS LETTERS, 1999, 40 (03) :114-117
[3]   Nanoscale global mixed ordering of B-site cations in Pb2M′M"O6 complex perovskite relaxors [J].
Baba-Kishi, K. Z. ;
Tai, C. W. ;
Meng, X. .
PHILOSOPHICAL MAGAZINE, 2006, 86 (32) :5031-5051
[4]  
Baba-Kishi KZ, 2002, FERROELECTRICS, V270, P1407, DOI 10.1080/00150190211203
[5]   Characterization of (0.4)Pb2(In,Nb)O6:(0.6)Pb(Mg1/3Nb2/3)O3 relaxor ceramics [J].
Baba-kishi, KZ ;
Tai, CW ;
Wang, J ;
Choy, CL ;
Chan, HLW ;
Bhalla, AS .
JOURNAL OF MATERIALS RESEARCH, 2002, 17 (02) :438-444
[6]   TRANSMISSION ELECTRON-MICROSCOPE STUDIES OF PHASE-TRANSITIONS IN SINGLE-CRYSTALS AND CERAMICS OF FERROELECTRIC PB(SC1/2TA1/2)O3 [J].
BABAKISHI, KZ ;
BARBER, DJ .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1990, 23 :43-54
[7]   ORDERING STRUCTURE AND DIELECTRIC-PROPERTIES OF UNDOPED AND LA/NA-DOPED PB(MG1/3NB2/3)O3 [J].
CHEN, J ;
CHAN, HM ;
HARMER, MP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (04) :593-598
[8]   Dielectric relaxation behavior and its relation to microstructure in relaxor ferroelectric polymers: High-energy electron irradiated poly(vinylidene fluoride-trifluoroethylene) copolymers [J].
Cheng, ZY ;
Zhang, QM ;
Bateman, FB .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (11) :6749-6755
[9]   ROLE OF DEFECTS IN THE FERROELECTRIC RELAXER LEAD SCANDIUM TANTALATE [J].
CHU, F ;
REANEY, IM ;
SETTER, N .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (07) :1947-1952
[10]   THE SPONTANEOUS RELAXOR-FERROELECTRIC TRANSITION OF PB(SC0.5TA0.5)O3 [J].
CHU, F ;
SETTER, N ;
TAGANTSEV, AK .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :5129-5134