Deep level transient spectroscopy of SnO2-based varistors

被引：6

作者：

Fan, Jiwei

Freer, Robert ^{[1
]}

机构：

[1] Univ Manchester, Sch Mat, Manchester M1 7HS, Lancs, England

[2] Zhongyuan Univ Technol, Sch Mat & Chem Engn, Zhengzhou 450007, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2710752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy measurements were performed to investigate the effect of Nb2O5 and Cr2O3 on the electronic states of SnO2-based varistors. Two electron traps, E-c-0.30(+/- 0.01) eV and E-c-0.69(+/- 0.03) eV, were identified in both SnO2-CoO-Nb2O5 and SnO2-CoO-Nb2O5-Cr2O3 varistors. These two traps could be associated with the second ionization energy of oxygen vacancies V-O(center dot center dot) or impurities on host lattice site Co-Sn(') or Nb-Sn(center dot). The two trap levels are not associated with chromium doping, since Cr2O3 doping only changes the donor density and trap densities. (c) 2007 American Institute of Physics.

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页数：3

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