Hybrid silicon lasers for optical interconnects

被引:21
作者
Dai, Daoxin [1 ]
Fang, Alexander [1 ]
Bowers, John E. [1 ]
机构
[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA
关键词
SEMICONDUCTOR-LASERS; EVANESCENT LASER; MODULATION; PHOTODETECTOR; WAVELENGTH; GAIN;
D O I
10.1088/1367-2630/11/12/125016
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose high-speed modulation of hybrid silicon lasers through modulation of the photon lifetime tau(p). Two structures are presented to achieve tau(p)-modulation by modifying the distributed loss or the feedback coefficient of the laser cavity. By using small-signal modeling and the finite-difference method, the responses in the frequency and time domains are given. It is shown that it is possible to achieve a 3 dB bandwidth of over 100 GHz and a high data transmission rate of more than 50 GHz. The theoretical analysis also shows that the chirp due to the variations of the carrier densities in the gain/modulation sections is very small.
引用
收藏
页数:17
相关论文
共 20 条
[1]   MODULATION BEHAVIOR OF SEMICONDUCTOR INJECTION-LASERS [J].
ARNOLD, G ;
RUSSER, P .
APPLIED PHYSICS, 1977, 14 (03) :255-268
[2]   CONTROL OF SURFACE-EMITTING LASER-DIODES BY MODULATING THE DISTRIBUTED BRAGG MIRROR REFLECTIVITY - SMALL-SIGNAL ANALYSIS [J].
AVRUTIN, EA ;
GORFINKEL, VB ;
LURYI, S ;
SHORE, KA .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2460-2462
[3]   HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].
BOWERS, JE ;
HEMENWAY, BR ;
GNAUCK, AH ;
WILT, DP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844
[4]   HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].
BOWERS, JE .
SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11
[5]   1310nm silicon evanescent laser [J].
Chang, Hsu-Hao ;
Fang, Alexander W. ;
Sysak, Matthew N. ;
Park, Hyundai ;
Jones, Richard ;
Cohen, Oded ;
Raday, Omri ;
Paniccia, Mario J. ;
Bowers, John E. .
OPTICS EXPRESS, 2007, 15 (18) :11466-11471
[6]   Intersubband electroluminescence from silicon-based quantum cascade structures [J].
Dehlinger, G ;
Diehl, L ;
Gennser, U ;
Sigg, H ;
Faist, J ;
Ensslin, K ;
Grützmacher, D ;
Müller, E .
SCIENCE, 2000, 290 (5500) :2277-+
[7]   Electrically pumped hybrid AlGaInAs-silicon evanescent laser [J].
Fang, Alexander W. ;
Park, Hyundai ;
Cohen, Oded ;
Jones, Richard ;
Paniccia, Mario J. ;
Bowers, John E. .
OPTICS EXPRESS, 2006, 14 (20) :9203-9210
[8]   Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector [J].
Fang, Alexander W. ;
Jones, Richard ;
Park, Hyundai ;
Cohen, Oded ;
Raday, Omri ;
Paniccia, Mario J. ;
Bowers, John E. .
OPTICS EXPRESS, 2007, 15 (05) :2315-2322
[9]   Size influence on the propagation loss induced by sidewall roughness in ultrasmall SOI waveguides [J].
Grillot, F ;
Vivien, L ;
Laval, S ;
Pascal, D ;
Cassan, E .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1661-1663
[10]   Strong exciton-erbium coupling in Si nanocrystal-doped SiO2 [J].
Kik, PG ;
Brongersma, ML ;
Polman, A .
APPLIED PHYSICS LETTERS, 2000, 76 (17) :2325-2327