Direct Growth of Semiconducting Single-Walled Carbon Nanotube Array

被引：131

作者：

Hong, Guo ^{[1
]}

Zhang, Bo ^{[1
]}

Peng, Banghua ^{[1
]}

Zhang, Jin ^{[1
]}

Choi, Won Mook ^{[2
]}

Choi, Jae-Young ^{[2
]}

Kim, Jong Min ^{[2
]}

Liu, Zhongfan ^{[1
]}

机构：

[1] Peking Univ, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, Key Lab Phys & Chem Nanodevices, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China

[2] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 41期

关键词：

TRANSISTORS;

D O I：

10.1021/ja9068529

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By introducing the UV beam into our homemade chemical vapor deposition system, We had obtained a welt aligned SWNT array on an ST-cut quartz substrate. After transfer onto a SiO2/Sl substrate, the SWNT array was detected by Raman spectroscopy and electrical measurement, which showed that over 95% of the SWNTs were semiconducting ones. It is proposed that the selection process took place at the very beginning of the SWNT formation rather than destroying the metallic SWNTs after growth. This approach has solved one of the most important problems in SWNT application.

引用

页码：14642 / +

页数：4

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