Si islands with 1 x 1 termination formed by desorption of Tl from Si(111) surface

被引：1
|
作者：
Kocan, P. [1 ,2 ]
Tochihara, H. [1 ]
机构：
[1] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka 8168580, Japan
[2] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, CR-18000 Prague 8, Czech Republic
来源：
APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 04期
关键词：
Scanning tunneling microscopy; Silicon; Thallium; Si(111); ELECTRON-DIFFRACTION; THALLIUM OVERLAYERS; 5X5; RECONSTRUCTION; CLEAVED SILICON; ADSORPTION; MODEL;
D O I：
10.1016/j.apsusc.2009.05.078
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the scanning tunneling microscopy observation of small Si islands with a 1 x 1 termination on the Si(1 1 1) surface. The islands were prepared by thermal desorption of Tl from the Tl-terminated silicon sample by means of annealing to 400-600 degrees C. Structure of the islands is interpreted as the dimer-stacking-fault (DS) model. We propose that the otherwise unfavorable 1 x 1 termination is stabilized by subsurface dimers of DS. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：1168 / 1170
页数：3
相关论文
共 50 条
  • [41] Growth morphology and electronic structure of Na films on Si(111)-(7x7) and Si(111)-Na(3x1)
    Paggel, JJ
    Neuhold, G
    Haak, H
    Horn, K
    SURFACE SCIENCE, 1998, 414 (1-2) : 221 - 235
  • [42] (6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K
    Urbieta, A.
    Schulte, K.
    Grandidier, B.
    Deresmes, D.
    Erwin, S. C.
    Stievenard, D.
    SURFACE SCIENCE, 2009, 603 (02) : 311 - 314
  • [43] Hysteresis in the (1 x 1)-(7 x 7) first-order phase transition on the Si(111) surface
    Hu, CW
    Hibino, H
    Ogino, T
    Tsong, IST
    SURFACE SCIENCE, 2001, 487 (1-3) : 191 - 200
  • [44] Huge charge transfer from potassium on H:Si(111)-(1x1)
    Grupp, C
    Taleb-Ibrahimi, A
    SURFACE SCIENCE, 1998, 408 (1-3) : 160 - 164
  • [45] Investigation of 1,1-dichloroethene interacting with the Si(111)-7 x 7 surface studied by scanning tunneling microscopy
    Andersen, T. H.
    Svenum, I. -H.
    Gabrielsen, A.
    Borg, A.
    SURFACE SCIENCE, 2009, 603 (01) : 84 - 90
  • [46] Effect of oxygen on the stability of Ag islands on Si(111)-7 x 7
    Shao, Dahai
    Liu, Xiaojie
    Lu, Ning
    Wang, C. -Z.
    Ho, Kai-Ming
    Tringides, M. C.
    Thiel, P. A.
    SURFACE SCIENCE, 2012, 606 (23-24) : 1871 - 1878
  • [47] Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions
    Fonin, M
    Choi, JM
    May, U
    Hauch, JO
    Rüdiger, U
    Güntherodt, G
    SURFACE SCIENCE, 2002, 511 (1-3) : 312 - 318
  • [48] Adsorption/desorption kinetics of Na atoms on reconstructed Si (111)-7 x 7 surface
    Chauhan, Amit Kumar Singh
    Govind
    Shivaprasad, S. M.
    THIN SOLID FILMS, 2010, 519 (03) : 1012 - 1015
  • [49] Antimony induced cluster formation on the Si(111)7 x 7 surface
    Appelfeller, S.
    Franz, M.
    Daehne, M.
    SURFACE SCIENCE, 2013, 608 : 109 - 114
  • [50] Structure of the Si(111)-(5 x 2)-Au Surface
    Abukawa, Tadashi
    Nishigaya, Yoshiki
    PHYSICAL REVIEW LETTERS, 2013, 110 (03)
12345