Si islands with 1 x 1 termination formed by desorption of Tl from Si(111) surface

被引：1
|
作者：
Kocan, P. [1 ,2 ]
Tochihara, H. [1 ]
机构：
[1] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka 8168580, Japan
[2] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, CR-18000 Prague 8, Czech Republic
来源：
APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 04期
关键词：
Scanning tunneling microscopy; Silicon; Thallium; Si(111); ELECTRON-DIFFRACTION; THALLIUM OVERLAYERS; 5X5; RECONSTRUCTION; CLEAVED SILICON; ADSORPTION; MODEL;
D O I：
10.1016/j.apsusc.2009.05.078
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the scanning tunneling microscopy observation of small Si islands with a 1 x 1 termination on the Si(1 1 1) surface. The islands were prepared by thermal desorption of Tl from the Tl-terminated silicon sample by means of annealing to 400-600 degrees C. Structure of the islands is interpreted as the dimer-stacking-fault (DS) model. We propose that the otherwise unfavorable 1 x 1 termination is stabilized by subsurface dimers of DS. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：1168 / 1170
页数：3
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