Si islands with 1 x 1 termination formed by desorption of Tl from Si(111) surface

被引：1

作者：

Kocan, P. ^{[1
,2
]}

Tochihara, H. ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka 8168580, Japan

[2] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, CR-18000 Prague 8, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 04期

关键词：

Scanning tunneling microscopy; Silicon; Thallium; Si(111); ELECTRON-DIFFRACTION; THALLIUM OVERLAYERS; 5X5; RECONSTRUCTION; CLEAVED SILICON; ADSORPTION; MODEL;

D O I：

10.1016/j.apsusc.2009.05.078

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the scanning tunneling microscopy observation of small Si islands with a 1 x 1 termination on the Si(1 1 1) surface. The islands were prepared by thermal desorption of Tl from the Tl-terminated silicon sample by means of annealing to 400-600 degrees C. Structure of the islands is interpreted as the dimer-stacking-fault (DS) model. We propose that the otherwise unfavorable 1 x 1 termination is stabilized by subsurface dimers of DS. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：1168 / 1170

页数：3

共 50 条

[1] Ab initio study of Tl on Si(111)-(3x1) surface
Ozkaya, Sibel
Cakmak, Mehmet
Alkan, Bora
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (08): : 1570 - 1573
[2] Magic clusters and (2 x 1) local structure formed in a half-unit cell of the Si(111)-(7 x 7) surface by Tl adsorption
Kocan, P.
Visikovskiy, A. V.
Ohira, Y.
Yoshimura, M.
Ueda, K.
Tochihara, H.
APPLIED SURFACE SCIENCE, 2008, 254 (23) : 7647 - 7650
[3] Surface phonons of Si(111):H-(1 x 1) and Si(111):As-(1 x 1)
Honke, R
Pavone, P
Schroder, U
SURFACE SCIENCE, 1996, 367 (01) : 75 - 86
[4] Surface conductance of Si(100)2 x 1 and Si(111)7 x 7
Yoo, K
Weitering, HH
SURFACE SCIENCE, 2001, 482 : 482 - 487
[5] Influence of anisotropic Si(111)-(4 x 1)-In surface on growth of nanoscale In islands
Chandola, Sandhya
Esser, Norbert
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (04):
[6] The growth of indium on the H-terminated Si(111) 1x1 surface
Leisenberger, FP
Ofner, H
Ramsey, MG
Netzer, FP
SURFACE SCIENCE, 1997, 383 (01) : 25 - 36
[7] Growth of Si on disordered Si(111)(1x1) surfaces
Veuillen, JY
Mallet, P
Gomez-Rodriguez, JM
SURFACE SCIENCE, 1998, 402 (1-3) : 295 - 298
[8] Hydrogen desorption from a Si(111)1x1 surface studied by sum frequency generation spectroscopy and microscopy
Khat Thi Thu Hien
Miyauchi, Yoshihiro
Kikuchi, Masahiro
Mizutani, Goro
SURFACE AND INTERFACE ANALYSIS, 2012, 44 (06) : 662 - 665
[9] Si-H vibrational mode on a H-Si(111)1 x 1 surface with hydrogen deficiency
Miyauchi, Yoshihiro
Chuat, Hien
Mizutani, Goro
SURFACE SCIENCE, 2013, 614 : 24 - 29
[10] Anomalous structural evolution and √3x√3 reconstruction of a clean Si(111) surface observed after thermal desorption of thallium
Kocan, Pavel
Krejci, Ondrej
Tochihara, Hiroshi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (02):

← 1 2 3 4 5 →