Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

被引：12
|
作者：
Yue, Zeng Ji [1 ,2 ,3 ]
Zhao, Kun [1 ,2 ,3 ,4 ]
Zhao, Song Qing [2 ,3 ]
Lu, Zhi Qing [2 ,3 ]
Li, Xiao Ming [2 ,3 ]
Ni, Hao [2 ,3 ]
Wang, Ai Jun [3 ]
机构：
[1] China Univ Petr, State Key Lab Petr Resource & Prospecting, Beijing 102249, Peoples R China
[2] China Univ Petr, Lab Opt Sensing & Detecting Technol, Beijing 102249, Peoples R China
[3] China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China
[4] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 01期
基金：
北京市自然科学基金;
关键词：
BATIO3/SRTIO3; SUPERLATTICES; TRANSITION; INJECTION; DIODE; FILMS;
D O I：
10.1088/0022-3727/43/1/015104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photovoltaic effects of Nb-doped SrTiO3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 mu m-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.
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页数：4
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