Integration of III-V on Silicon Gain Devices At the Backside of Silicon-on-Insulator Wafers For Photonic Fully Integrated Circuits

被引：0

作者：

Menezo, Sylvie ^{[1
,2
]}

Thiessen, Torrey ^{[3
]}

Mak, Jason ^{[3
,4
]}

Fonseca, Jeremy ^{[2
]}

Ribaud, Karen ^{[2
]}

Yong, Zheng ^{[3
,4
]}

Jany, Christophe ^{[2
]}

Poon, Joyce K. S. ^{[3
,4
]}

机构：

[1] SCINTIL Photon, 7 Purvis Louis Neel, F-38040 Grenoble, France

[2] CFA Leti, 17 Rue Martyrs, F-38000 Grenoble, France

[3] Univ Toronto, Dept Elect & Comp Engn, 10 Kings Coll Rd, Toronto, ON M5S 3G4, Canada

[4] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Saale, Germany

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

LASER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. The performances of lasers and SOAs fabricated accordingly are reported. (C) 2020 The Author(s) sylvie.menezo@scintil-photonics.com

引用

页数：2

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