Comment on "Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices"

被引：8
作者：
Majumdar, Himadri S.
Baral, Jayanta K.
Laiho, Ari
Ruokolainen, Janne
Ikkala, Olli
Osterbacka, Ronald
机构：
[1] Abo Akad Univ, Dept Phys, Turku 20500, Finland
[2] Helsinki Univ Technol, Dept Engn Phys & Math, Helsinki 02015, Finland
[3] Helsinki Univ Technol, Ctr New Mat, Helsinki 02015, Finland
来源：
ADVANCED MATERIALS | 2006年 / 18卷 / 21期
关键词：
D O I：
10.1002/adma.200600008
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：2805 / 2806
页数：2
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