Molecular beam epitaxy of BeTe on vicinal Si(100) surfaces

被引：16
|
作者：
Zhou, XC [1 ]
Jiang, S [1 ]
Kirk, WP [1 ]
机构：
[1] TEXAS A&M UNIV,NANOFAB CTR,COLLEGE STN,TX 77843
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0022-0248(96)00911-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
BeTe was epitaxially grown on vicinal Si(1 0 0) substrates for the first time. Reflection high energy electron diffraction (RHEED) was used to study the initial growth mode and the surface structure. Transmission elect ron microscopy (TEM) was used to study the crystal quality. The material was grown on both bare and arsenic covered vicinal Si(1 0 0) surfaces. Smooth and well-ordered surface structures readily formed during the growth. Low stacking-fault densities were obtained in the BeTe epilayers. The potential applications of the new material are discussed briefly.
引用
收藏
页码：624 / 631
页数：8
相关论文
共 50 条
  • [1] Molecular beam epitaxy of BeTe on vicinal Si(100) surfaces
    Texas A&M Univ, College Station, United States
    Journal of Crystal Growth, 1997, 175-176 (pt 1): : 624 - 631
  • [2] TRANSIENT GROWTH IN MOLECULAR-BEAM EPITAXY OF SI ON SI(100) VICINAL SURFACES
    KAWAMURA, T
    WILBY, MR
    SURFACE SCIENCE, 1993, 283 (1-3) : 360 - 365
  • [3] FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY
    GOLUBOK, AO
    GURYANOV, GM
    PETROV, VN
    SAMSONENKO, YB
    TIPISEV, SY
    TSYRLIN, GE
    LEDENTSOV, NN
    SEMICONDUCTORS, 1994, 28 (03) : 317 - 319
  • [4] Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
    Kajiwara, Takashi
    Nakamori, Yuzuru
    Visikovskiy, Anton
    Iimori, Takushi
    Komori, Fumio
    Nakatsuji, Kan
    Mase, Kazuhiko
    Tanaka, Satoru
    PHYSICAL REVIEW B, 2013, 87 (12):
  • [5] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY
    PETROFF, PM
    GOSSARD, AC
    WIEGMANN, W
    APPLIED PHYSICS LETTERS, 1984, 45 (06) : 620 - 622
  • [6] A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy
    Arpapay, Burcu
    Suyolcu, Y. Eren
    Corapcioglu, Gulcan
    van Aken, Peter A.
    Gulgun, Mehmet Ali
    Serincan, Ugur
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 36 (02)
  • [7] GaSb molecular beam epitaxy growth on vicinal surfaces studied by RHEED
    Bertru, N
    Nouaoura, M
    Bonnet, J
    Lassabatere, L
    JOURNAL OF CRYSTAL GROWTH, 1996, 160 (1-2) : 1 - 6
  • [8] GaSb molecular beam epitaxy growth on vicinal surfaces studied by RHEED
    Paul-Drude-Inst fur, Feskorperelektronik, Berlin, Germany
    J Cryst Growth, 1-2 (1-6):
  • [9] THE STUDY OF Si(100)AND(111)SURFACES AND Ni MOLECULAR BEAM EPITAXY ON THEM BY RHEED
    高铭台
    JournalofElectronics(China), 1988, (03) : 220 - 227
  • [10] Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
    Mashanov, Vladimir
    Ulyanov, Vladimir
    Timofeev, Vyacheslav
    Nikiforov, Aleksandr
    Pchelyakov, Oleg
    Yu, Ing-Song
    Cheng, Henry
    NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 5
12345