High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

被引：28

作者：

Hussein, A. Sh. ^{[1
]}

Thahab, S. M. ^{[1
]}

Hassan, Z. ^{[1
]}

Chin, C. W. ^{[1
]}

Abu Hassan, H. ^{[1
]}

Ng, S. S. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 487卷 / 1-2期

关键词：

AlxGa1-xN; SEM; XRD; Vegard's law; EDS line analysis; FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURES;

D O I：

10.1016/j.jallcom.2009.07.185

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The microstructure and optical properties of AlxGa1-xN/GaN/AlN films on Si (111) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of AlxGa1-xN sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the AlxGa1-xN has been successfully grown on Si substrate. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：24 / 27

页数：4

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