Phase diagram of the Ag2SnS3-ZnS pseudobinary system for Ag2ZnSnS4 crystal growth

被引：12

作者：

Nagaoka, Akira ^{[1
]}

Yoshino, Kenji ^{[2
]}

Kakimoto, Koichi ^{[3
]}

Nishioka, Kensuke ^{[1
]}

机构：

[1] Univ Miyazaki, Res Ctr Sustainable Energy & Environm Engn, Miyazaki 8892192, Japan

[2] Univ Miyazaki, Dept Appl Phys & Elect Engn, Miyazaki 8892192, Japan

[3] Kyushu Univ, Res Inst Appl Mech, Kasuga, Fukuoka 8168580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2021年 / 555卷

关键词：

Phase diagrams; Phase equilibria; Pseudobinary system; Growth from melt; Ag2ZnSnS4 (AZTS); Quaternary compounds; THIN-FILM; AG; ELIMINATION; CU2ZNSNS4; DEFECTS;

D O I：

10.1016/j.jcrysgro.2020.125967

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The phase equilibrium of the Ag2SnS3-ZnS pseudobinary system for the growth of Ag2ZnSnS4 (AZTS) crystals was investigated using the equilibration-quenching technique. The growth mechanism of AZTS follows the peritectic reaction liquid phase + ZnS phase. AZTS phase, which occurs at a composition of similar to 20 mol% ZnS and a temperature of approximately 700 degrees C. The AZTS polycrystalline sample was obtained from the stoichiometric melt growth. The kesterite structure of the AZTS sample without secondary phases was identified by a combination of X-ray diffraction and Raman spectroscopy measurements. The electron carrier concentration and conductivity, determined by the Hall effect measurement, were (3.0-6.3) x 10(15) cm(-3) and (5.6-9.2) x 10(-4) S/cm, respectively. The slightly Zn-rich and S-poor composition led to n-type conduction in the AZTS because of the dominant Zn antisites on Ag (Zn-Ag) and S vacancy (V-S) defects. Therefore, this study can make a significant contribution to the research and application of AZTS materials.

引用

页数：6

共 24 条

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