Investigation of antenna-coupled MOM diodes for infrared sensor applications

We report the fabrication and experimental study of uncooled, unbiased infrared sensors suited for the detection of optical and near IR-radiation. The detector consists of a metal-oxide-metal junction fabricated on an oxidized silicon wafer by a single electron beam lithography step combined with double-angle evaporation. We fabricated symmetrical and asymmetrical diodes with junction areas around 50 nm x 50 nm, which is smaller than those used in previous work. In this paper we present the fabrication procedure of the sensors, do I-V measurements of the diodes, and the optical and near IR measurements.