CMOS compatible thermoelectric infrared sensors

被引：0

作者：

Shown, CS ^{[1
]}

Chi, S

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[2] Opto Technol Corp, Hsinchu, Taiwan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 13期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new structure for CMOS compatible thermoelectric infrared sensors is proposed. By using micro-link structures to connect several floating membranes, the largest floating membrane area yet obtained and large output voltages have been realised. The characteristics of the sensors have been measured, and are compared with those of existing devices.

引用

页码：1117 / 1118

页数：2