Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

被引：0

作者：

Lu, J. ^{[1
]}

Xu, P. F. ^{[1
]}

Zhu, Y. G. ^{[1
]}

Meng, H. J. ^{[1
]}

Chen, L. ^{[1
]}

Wang, W. Z. ^{[1
]}

Zhang, X. H. ^{[1
]}

Zhao, J. H. ^{[1
]}

Pan, G. Q. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 42卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Fe thin film; Anisotropic strain relaxation; Magnetic anisotropy; X-ray diffraction; EPITAXIAL-GROWTH; GAAS(001);

D O I：

10.1016/j.physe.2009.09.017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the interplay between the anisotropic strain relaxation and the in-plane uniaxial magnetic anisotropy in a 5 nm Fe film grown on GaAs (0 0 1) by molecular-beam epitaxy. Tetragonal distortion and in-plane anisotropic strain relaxation were accurately measured by synchrotron X-ray diffraction. A stronger coherence at the interface between Fe and GaAs is also observed in the annealed film. A competing model including magnetocrystalline anisotropy, interface anisotropy, and magnetoelastic anisotropy is proposed to characterize the in-plane magnetic anisotropy. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：150 / 153

页数：4

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