Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for HF integrated passives

被引：15

作者：

Lacrevaz, T.

Flechet, B.

Farcy, A.

Torres, J.

Gros-Jean, M.

Bermond, C.

Vo, T. T.

Cueto, O.

Blampey, B.

Angenieux, G.

Piquet, J.

de Crecy, F.

机构：

[1] Univ Savoie, LAHC, F-73376 Le Bourget du Lac, France

[2] STMicroelect, F-38926 Crolles, France

[3] CEA, LETI, Technol Avancees, F-38054 Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 11-12期

关键词：

permittivity; High-K; dielectrics; characterization; high frequency; coplanar wave guide;

D O I：

10.1016/j.mee.2006.10.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High permittivity insulators (High-K) are progressively introduced in high-speed integrated passives and devices in order to optimize circuits performances. However, High-K properties are expected to vary with manufacturing process and also frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate High-K behaviour from DC to microwave frequency. Real permittivity (K or epsilon'(r)) and losses (epsilon"(r)) assessment is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin (down to 60 nm) planar dielectrics integrated below a copper coplanar wave-guide up to 40 GHz. Results of Si3N4, Ta2O5 and STO insulators are presented in this paper. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2184 / 2188

页数：5