Comparative analysis of unity gain frequency of top and bottom-contact organic thin film transistors

被引:14
作者
Islam, M. Nurul [1 ]
Mazhari, B.
机构
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
关键词
Unity gain frequency; OTFT; ELECTRICAL CHARACTERISTICS; HIGH-MOBILITY; THICKNESS; FABRICATION; RESISTANCE; VOLTAGE; LAYER;
D O I
10.1016/j.sse.2009.06.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work shows that placement of source/drain contacts on top of organic semiconductor film in top-contact organic thin film transistors (OTFT) can offer significant improvement in device speed as compared to bottom-contact devices. 2D numerical simulations and analytical models for unity gain frequency are used to quantify the differences between the top and bottom-contact devices. It is shown that while transconductance is lower in top-contact devices, the gate-drain capacitance is significantly lower as well resulting in improved frequency performance. It is also shown that there is an optimum semiconductor film thickness at which maximum unity gain frequency in top-contact OTFT is obtained. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1067 / 1075
页数:9
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