This work shows that placement of source/drain contacts on top of organic semiconductor film in top-contact organic thin film transistors (OTFT) can offer significant improvement in device speed as compared to bottom-contact devices. 2D numerical simulations and analytical models for unity gain frequency are used to quantify the differences between the top and bottom-contact devices. It is shown that while transconductance is lower in top-contact devices, the gate-drain capacitance is significantly lower as well resulting in improved frequency performance. It is also shown that there is an optimum semiconductor film thickness at which maximum unity gain frequency in top-contact OTFT is obtained. (C) 2009 Elsevier Ltd. All rights reserved.
机构:
Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, ItalyUniv Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Bolognesi, A
;
Berliocchi, M
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Berliocchi, M
;
Manenti, M
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Manenti, M
;
Di Carlo, A
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Di Carlo, A
;
Lugli, P
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Lugli, P
;
Lmimouni, K
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Lmimouni, K
;
Dufour, C
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy
Bolognesi, A
;
Di Carlo, A
论文数: 0引用数: 0
h-index: 0
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy
Di Carlo, A
;
Lugli, P
论文数: 0引用数: 0
h-index: 0
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy
机构:
Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, ItalyUniv Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Bolognesi, A
;
Berliocchi, M
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Berliocchi, M
;
Manenti, M
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Manenti, M
;
Di Carlo, A
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Di Carlo, A
;
Lugli, P
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Lugli, P
;
Lmimouni, K
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
Lmimouni, K
;
Dufour, C
论文数: 0引用数: 0
h-index: 0
机构:Univ Roma Tor Vergata, Fac Ingn, Dipartimento Ingn Elettron, I-00133 Rome, Italy
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy
Bolognesi, A
;
Di Carlo, A
论文数: 0引用数: 0
h-index: 0
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy
Di Carlo, A
;
Lugli, P
论文数: 0引用数: 0
h-index: 0
机构:
Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, ItalyUniv Roma Tor Vergata, INFM, Dipartimento Ingn Elettr, I-00173 Rome, Italy