Electroluminescence properties of rare-earth-activated SrS thin films under light irradiation

被引：4

作者：

Tanaka, I ^{[1
]}

Izumi, Y ^{[1
]}

Tanaka, K ^{[1
]}

Inoue, Y ^{[1
]}

Okamoto, S ^{[1
]}

机构：

[1] NHK Japan Broadcasting Corp, Sci & Tech Res Labs, Setagaya Ku, Tokyo 1578510, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

electroluminescence; rare earth; SrS; thin film;

D O I：

10.1016/S0022-2313(99)00591-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have investigated the effects of external light irradiation on the electroluminescence properties of SrS thin films activated with Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Tm in order to clarify the generation mechanism of the dynamic space charge. The photo-induced space charge is observed in all of our fabricated devices, and that of SrS : Ce is the largest. The possible origin of the dynamic space charge is the ionization of deep traps in the interfaces between the phosphor layer and the ZnS buffer layer, and/or the electron generation in the buffer layers sandwiching the phosphor layer. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1189 / 1191

页数：3

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