Study of Si IGBT and SiC MOSFET Performance Based on Double-Pulse Test

The dynamic characteristics test of power devices can provide effective data support for the selection of switching devices, working safety range, efficiency and loss assessment of power electronic devices. In this paper, the simulation analysis model of the device is obtained primarily, and then based on LTspice simulation software, the effects of driving resistance on the turn-on and turn-off processes of the power devices are analyzed. Then, a dual-pulse test system is built to study the influence of driving parameters and current on insulator gate bipolar transistor(IGBT) switching characteristics by changing circuit parameters. Compared with silicon devices, silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET), as a new and widely used switching device, has faster switching speed and lower device loss in practical application, which can improve the efficiency of the converter and reflect better performance. In this paper, the double-pulse test of SiC MOSFET is also carried out based on the experimental platform to compare the performance of the two power devices.