Structure and electronic properties of rare earth DOBDC metal-organic-frameworks

被引:31
作者
Vogel, Dayton J. [1 ]
Gallis, Dorina F. Sava [1 ]
Nenoff, Tina M. [2 ]
Rimsza, Jessica M. [3 ]
机构
[1] Sandia Natl Labs, Nanoscale Sci Dept, POB 5800, Albuquerque, NM 87185 USA
[2] Sandia Natl Labs, Mat Phys & Chem Sci, POB 5800, Albuquerque, NM 87185 USA
[3] Sandia Natl Labs, Geochem Dept, POB 5800, Albuquerque, NM 87185 USA
关键词
DENSITY-FUNCTIONAL THEORY; ZEOLITIC IMIDAZOLATE FRAMEWORKS; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; AB-INITIO; STABILITY; IONS; LUMINESCENT; ADSORPTION; SPECTRA;
D O I
10.1039/c9cp04038b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Here, we apply density functional theory (DFT) to investigate rare-earth metal organic frameworks (RE-MOFs), RE12(mu(3)-OH)(16)(C8O6H4)(8)(C8O6H5)(4) (RE = Y, Eu, Tb, Yb), and characterize the level of theory needed to accurately predict structural and electronic properties in MOF materials with 4f-electrons. A two-step calculation approach of geometry optimization with spin-restricted DFT and large core potential (LCPs), and detailed electronic structures with spin-unrestricted DFT with a full valence potential + Hubbard U correction is investigated. Spin-restricted DFT with LCPs resulted in good agreement between experimental lattice parameters and optimized geometries, while a full valence potential is necessary for accurate representation of the electronic structure. The electronic structure of Eu-DOBDC MOF indicated a strong dependence on the treatment of highly localized 4f-electrons and spin polarization, as well as variation within a range of Hubbard corrections (U = 1-9 eV). For Hubbard corrected spin-unrestricted calculations, a U value of 1-4 eV maintains the non-metallic character of the band gap with slight deviations in f-orbital energetics. When compared with experimentally reported results, the importance of the full valence calculation and the Hubbard correction in correctly predicting the electronic structure is highlighted.
引用
收藏
页码:23085 / 23093
页数:9
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