Directed self-assembly of solvent-vapor-induced non-bulk block copolymer morphologies on nanopatterned substrates

被引:22
作者
Wan, Lei [1 ]
Ji, Shengxiang [2 ]
Liu, Chi-Chun [3 ]
Craig, Gordon S. W. [4 ]
Nealey, Paul F. [4 ]
机构
[1] HGST, San Jose Res Ctr, 3403 Yerba Buena Rd, San Jose, CA 95135 USA
[2] Chinese Acad Sci, Changchun Inst Appl Chem, Key Lab Polymer Ecomat, 5625 Renmin St, Changchun 130022, Peoples R China
[3] IBM Albany NanoTech, 257 Fuller Rd, Albany, NY 12203 USA
[4] Univ Chicago, Inst Mol Engn, 5747 South Ellis Ave, Chicago, IL 60637 USA
基金
中国国家自然科学基金;
关键词
THIN-FILMS; DENSITY MULTIPLICATION; AREAL DENSITY; FABRICATION; NANOSTRUCTURES; GRAPHOEPITAXY; LITHOGRAPHY; NANOLITHOGRAPHY; PATTERNS; BLENDS;
D O I
10.1039/c5sm02829a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a study on directed self-assembly (DSA) with solvent annealing to induce the formation of non-bulk block copolymer microdomains on chemical patterns. Ultrathin films of symmetric polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) display morphologies of PMMA dots, stripes, and PS hexagons with increasing exposure time to acetone vapor, a PMMA-selective solvent. All three nanostructures form long-range-ordered and registered arrays on striped chemical patterns with periods (L-S) commensurate to the solvated PS-b-PMMA microdomain period (L-0,L-s). Solvent annealing is shown to facilitate DSA on non-regular chemical patterns, on which the local periods are incommensurate to L0, s. DSA with feature density multiplication, via solvent annealing, is also demonstrated.
引用
收藏
页码:2914 / 2922
页数:9
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