Photocross-Linkable Hole Transport Materials for Inkjet-Printed High-Efficient Quantum Dot Light-Emitting Diodes

被引：31

作者：

Sun, Wenjian ^{[1
]}

Xie, Liming ^{[2
]}

Guo, Xiaojun ^{[3
]}

Su, Wenming ^{[2
]}

Zhang, Qing ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Chem & Chem Engn, Shanghai Key Lab Elect Insulat & Thermal Aging, Shanghai 200240, Peoples R China

[2] Chinese Acad Sci, Printable Elect Res Ctr, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China

[3] Shanghai Jiao Tong Univ, Dept Elect Engn, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200240, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 52期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

quantum dot light-emitting diodes; solvent resistance; cross-linking; benzophenone; inkjet-printed; hole transport; TURN-ON-VOLTAGE; FULL-COLOR; POLYMER; LAYERS;

D O I：

10.1021/acsami.0c17336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Efficient approach based on the photochemistry of benzophenone has been developed for the cross-linking of the polymer hole-transporting layer (HTL). The cross-linked poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-butylphenyl) (TFB) thin films showed high solvent stability, smooth surface morphology, and improved charge-carrier mobility. The solution-processed red, green, and blue (RGB) quantum dot light-emitting diodes (QLEDs) based on the cross-linked HTLs showed much better performances than the corresponding devices based on the pristine TFB HTLs. The spin-coated red QLEDs based on the cross-linked HTLs showed the maximum current efficiency (CE), the maximum power efficiency (PE), and the peak external quantum efficiency (EQE) of 32.3 cd A(-1), 42.3 lm W-1, and 21.4%, respectively. The inkjet-printed red QLEDs with the cross-linked HTLs exhibited the CE, PE, and EQE of 26.5 cd A(-1), 37.8 lm W-1, and 18.1%, respectively. The high-performance HTLs were obtained by significantly reducing the amount of cross-linking agents.

引用

页码：58369 / 58377

页数：9

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