Nonlinear electric model of a resonant-tunneling diode

被引:0
作者
Abramov, II [1 ]
Danilyuk, AL [1 ]
Korolev, AV [1 ]
机构
[1] Belorussian Informat & Radioelect Univ, Minsk, BELARUS
来源
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 2000年 / 43卷 / 3-4期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:59 / 63
页数:5
相关论文
共 50 条
[21]   PHOTOCONTROLLED DOUBLE-BARRIER RESONANT-TUNNELING DIODE [J].
LI, HS ;
CHEN, YW ;
WANG, KL ;
PAN, DS ;
CHEN, LP ;
LIU, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1269-1272
[22]   Modeling of Resonant-Tunneling Diode with Uniform and Graded Emitter [J].
Fediai, Artem ;
Moskaliuk, Volodymyr .
2013 IEEE XXXIII INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2013, :107-111
[23]   Terahertz Emitter Using Resonant-Tunneling Diode and Applications [J].
Asada, Masahiro ;
Suzuki, Safumi .
SENSORS, 2021, 21 (04) :1-20
[24]   Resonant-tunneling diode on the basis of silicon multilayer cathode [J].
Goncharuk, Nina M. .
2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, :1602-1605
[25]   QUANTUM HYDRODYNAMIC SIMULATION OF HYSTERESIS IN THE RESONANT-TUNNELING DIODE [J].
CHEN, ZX ;
COCKBURN, B ;
GARDNER, CL ;
JEROME, JW .
JOURNAL OF COMPUTATIONAL PHYSICS, 1995, 117 (02) :274-280
[26]   Optical diagnostic monitoring of resonant-tunneling diode growth [J].
Celii, FG ;
Moise, TS ;
Kao, YC ;
Katz, AJ .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) :1064-1072
[27]   TERAHERTZ RESPONSE OF AN INGAAS ALAS RESONANT-TUNNELING DIODE [J].
SCOTT, JS ;
KAMINSKI, JP ;
ALLEN, SJ ;
CHOW, D ;
LUI, M ;
LIU, TY .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) :530-532
[28]   Simulation of short Gunn diode with resonant-tunneling cathode [J].
Storozhenko, IP ;
Prokhorov, ED ;
Botsula, OV .
MSMW'04: FIFTH INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER, AND SUBMILLIMETER WAVES, SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2004, :549-551
[29]   SEQUENTIAL TUNNELING VERSUS RESONANT-TUNNELING IN A DOUBLE-BARRIER DIODE [J].
HU, YM ;
STAPLETON, S .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8633-8636
[30]   GaAs/AlAs resonant-tunneling diode for subharmonic mixers [J].
Alkeev N.V. ;
Averin S.V. ;
Dorofeev A.A. ;
Gladysheva N.B. ;
Torgashin M.Yu. .
Russian Microelectronics, 2010, 39 (05) :331-339