A new type of soluble pentacene precursor for organic thin-film transistors

被引：66
作者：
Chen, Kew-Yu
Hsieh, Hsing-Hung
Wu, Chung-Chih
Hwang, Jiunn-Jye
Chow, Tahsin J. [1 ]
机构：
[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[4] AU Optron Corp, Hsinchu 300, Taiwan
[5] Acad Sinica, Inst Chem, Taipei 115, Taiwan
来源：
CHEMICAL COMMUNICATIONS | 2007年 / 10期
关键词：
D O I：
10.1039/b616511g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Anew type of soluble pentacene precursor is synthesized, which extrudes a unit of CO upon heating at 150 degrees C, to produce pentacene in nearly quantitative yield.
引用
收藏
页码：1065 / 1067
页数：3
相关论文
共 26 条
  • [1] N-sulfinylcarbamate-pentacene adduct:: A novel pentacene precursor soluble in alcohols
    Afzali, A
    Kagan, CR
    Traub, GP
    [J]. SYNTHETIC METALS, 2005, 155 (03) : 490 - 494
  • [2] High-performance, solution-processed organic thin film transistors from a novel pentacene precursor
    Afzali, A
    Dimitrakopoulos, CD
    Breen, TL
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (30) : 8812 - 8813
  • [3] CRYSTAL AND MOLECULAR STRUCTURE OF PENTACENE
    CAMPBELL, RB
    TROTTER, J
    ROBERTSON, JM
    [J]. ACTA CRYSTALLOGRAPHICA, 1961, 14 (07): : 705 - &
  • [4] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
  • [5] 2-9
  • [6] Molecular beam deposited thin films of pentacene for organic field effect transistor applications
    Dimitrakopoulos, CD
    Brown, AR
    Pomp, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2501 - 2508
  • [7] Formation of molecular order on a disordered interface layer: Pentacene/Ag(111)
    Eremtchenko, M
    Temirov, R
    Bauer, D
    Schaefer, JA
    Tautz, FS
    [J]. PHYSICAL REVIEW B, 2005, 72 (11)
  • [8] Pentacene organic thin-film transistors - Molecular ordering and mobility
    Gundlach, DJ
    Lin, YY
    Jackson, TN
    Nelson, SF
    Schlom, DG
    [J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) : 87 - 89
  • [9] Herwig PT, 1999, ADV MATER, V11, P480, DOI 10.1002/(SICI)1521-4095(199904)11:6<480::AID-ADMA480>3.0.CO
  • [10] 2-U
123