Effect of annealing on phase structure and degradation of a zinc oxide varistor with Si-additive

被引:16
作者
Shao, HQ [1 ]
Gao, XH [1 ]
Cao, ZC [1 ]
机构
[1] SHANGHAI UNIV SCI & TECHNOL,DEPT MAT SCI & ENGN,SHANGHAI 201800,PEOPLES R CHINA
关键词
D O I
10.1016/S0955-2219(96)00076-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of annealing of phase structure and degradation of the current-voltage characteristics for a ZnO varistor with Si-additive has been investigated. By means of X-ray diffraction, analytical electron microscopy and thermal analysis, it is found that a phase transition from delta-Bi2O3 (with dissolved Si), to Bi24Si2O40 (bismuth silicate) took place in the ZnO varistor after annealing at 470 degrees C. This transition is associated with a volume contraction, no notable thermal effect, a high transition rate and reversibility. It is calculated by crystallography that the volume contraction of the phase transition is 6.02%. The transition of the Bi-rich phase results in decreased levels of degradation and improved stability of the ZnO varistor. (C) 1996 Elsevier Science Limited.
引用
收藏
页码:55 / 59
页数:5
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