Bandgap Modulation of BeZnO Layers Grown by using Hybrid Plasma-Assisted Molecular-Beam Epitaxy/Electron-Beam Deposition

被引：6

作者：

Jeong, T. S. ^{[1
]}

Kim, J. H. ^{[1
]}

Park, D. S. ^{[1
]}

Yu, J. H. ^{[1
]}

Kim, T. S. ^{[1
]}

Youn, C. J. ^{[1
]}

Hong, K. J. ^{[2
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Chosun Univ, Dept Phys, Kwangju 501759, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 06期

关键词：

BeZnO; Molecular beam epitaxy; Bandgap modulation; Characterization; BEXZN1-XO ALLOYS;

D O I：

10.3938/jkps.55.2548

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Alloyed BeZnO layers were grown by using hybrid plasma-assisted molecular-beam epitaxy/electron-beam deposition. From the X-ray measurements, we certified that the x composition of the Be(x)Zn(1-x)O layers increases with increasing temperature of the Be effusion cell. With increasing x, the optical bandgap energy ranges from 3.236 to 4.122 eV, and a large bowing parameter of 6.32 eV is measured. Therefore, this finding may open up new possibilities for wide bandgap materials by conducting bandgap engineering using bandgap bowing. This indicates that the Be(x)Zn(1-x)O layer through bandgap timing can be utilized as a barrier layer in active layers consisting of the ZnO/Be(x)Zn(1-x)O quantum well structure.

引用

页码：2548 / 2551

页数：4

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