Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure

被引：0
|
作者：
Kozlowska, Anna [1 ]
Malag, Andrzej [2 ]
Pomraenke, Robert [3 ]
Renard, Julien [3 ]
Lienau, Christoph [3 ,4 ]
机构：
[1] Inst Electr Mat Technol, 32-46 Al Lotnikow St, PL-02668 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
[4] Carl Von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany
来源：
OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION III | 2006年 / 6368卷
关键词：
high-power diode lasers; near-field photo current; NPC; double barrier separate confinement heterostructure;
D O I：
10.1117/12.685124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analysis of the mode structure of high-power double-barrier separate confinement DB SCH diode lasers is presented. The devices are characterized by very low vertical beam divergence (13 - 22 degrees, depending on the design version). Modelling of the fundamental mode distribution for three different design versions of DB SCH diode lasers is discussed and the results are compared to a macroscopic characterization of the devices (far-field directional characteristics and photocurrent spectra). Microscopic measurements of the near field distribution of these diode lasers with subwavelength spatial resolution are performed by employing a Near-field Photocurrent (NPC) technique. The mode structure of diode lasers is directly visualized giving indications about the interplay between the heterostructure design and the emission characteristics.
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页数：9
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