A multi-dimensional kinetic simulation for nano-scale semiconductor devices

被引：0

作者：

Fedoseyev, A ^{[1
]}

Kolobov, V ^{[1
]}

Yang, HQ ^{[1
]}

Jiang, Y ^{[1
]}

Przekwas, A ^{[1
]}

机构：

[1] CFD Res Corp, Huntsville, AL 35805 USA

来源：

QUANTUM CONFINEMENT VI: NANOSTRUCTURED MATERIALS AND DEVICES | 2001年 / 2001卷 / 19期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We describe the details of numerical implementation of the multidimensional kinetic solver using kinetic and total energy domains. This solver provides a substantially lower computational cost than the Monte Carlo method, and resolves all points in phase space with equal accuracy. The effect of quantum corrections on spatial distribution of carriers is analyzed. Simulation results for an ultra-small MOSFET will be presented.

引用

页码：88 / 89

页数：2

共 4 条

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KANSA, EJ
[J]. COMPUTERS & MATHEMATICS WITH APPLICATIONS, 1990, 19 (8-9) : 147 - 161
[2] 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations
Liang, WC
Goldsman, N
Mayergoyz, I
Oldiges, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (02) : 257 - 267
[3] Tsuchiya H, 1999, IEICE T ELECTRON, VE82C, P880
[4] Yanenko N. A., 1971, METHOD FRACTIONAL ST

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