150 A SiC V-groove trench gate MOSFET with 6 x 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer

被引：14
作者：
Saitoh, Yu [1 ]
Itoh, Hironori [1 ]
Wada, Keiji [1 ]
Sakai, Mitsuhiko [1 ]
Horii, Taku [1 ]
Hiratsuka, Kenji [1 ]
Tanaka, So [1 ]
Mikamura, Yasuki [1 ]
机构：
[1] Sumitomo Elect Ind Ltd, Osaka 5540024, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
OXIDE-SEMICONDUCTOR STRUCTURES; CHEMICAL-VAPOR-DEPOSITION; CHANNEL MOBILITY; INTERFACE PROPERTIES; OXIDATION; REDUCTION; DENSITY; GROWTH; STATE;
D O I：
10.7567/JJAP.55.04ER05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at V-DS = 2 V and V-GS = 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 x 6 mm(2) single chip. Moreover, short switching times of t(r) = 81 ns and t(f) = 32 ns were also obtained. To fabricate such VMOSFETs with high yield, highly uniform in-house epitaxial growth technology on a 150-mm-diameter wafer is also one of the keys, owing to its characteristic dependence on drift layer carrier concentration. (C) 2016 The Japan Society of Applied Physics
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页数：5
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