150 A SiC V-groove trench gate MOSFET with 6 x 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer

被引：14

作者：

Saitoh, Yu ^{[1
]}

Itoh, Hironori ^{[1
]}

Wada, Keiji ^{[1
]}

Sakai, Mitsuhiko ^{[1
]}

Horii, Taku ^{[1
]}

Hiratsuka, Kenji ^{[1
]}

Tanaka, So ^{[1
]}

Mikamura, Yasuki ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Osaka 5540024, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

OXIDE-SEMICONDUCTOR STRUCTURES; CHEMICAL-VAPOR-DEPOSITION; CHANNEL MOBILITY; INTERFACE PROPERTIES; OXIDATION; REDUCTION; DENSITY; GROWTH; STATE;

D O I：

10.7567/JJAP.55.04ER05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at V-DS = 2 V and V-GS = 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 x 6 mm(2) single chip. Moreover, short switching times of t(r) = 81 ns and t(f) = 32 ns were also obtained. To fabricate such VMOSFETs with high yield, highly uniform in-house epitaxial growth technology on a 150-mm-diameter wafer is also one of the keys, owing to its characteristic dependence on drift layer carrier concentration. (C) 2016 The Japan Society of Applied Physics

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页数：5

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共 31 条

[1] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[2] Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000(1)over-bar) face [J].

Fukuda, K ;

Kato, M ;

Kojima, K ;

Senzaki, J .

APPLIED PHYSICS LETTERS, 2004, 84 (12) :2088-2090

[3] Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing [J].

Fukuda, K ;

Suzuki, S ;

Tanaka, T ;

Arai, K .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1585-1587

[4] 3.3 kV/1500A power modules for the world's first all-SiC traction inverter [J].

Hamada, Kenji ;

Hino, Shiro ;

Miura, Naruhisa ;

Watanabe, Hiroshi ;

Nakata, Shuhei ;

Suekawa, Eisuke ;

Ebiike, Yuji ;

Imaizumi, Masayuki ;

Umezaki, Isao ;

Yamakawa, Satoshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)

[5] Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen [J].

Hatayama, Tomoaki ;

Shimizu, Tomoya ;

Kouketsu, Hidenori ;

Yano, Hiroshi ;

Uraoka, Yukiharu ;

Fuyuki, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06)

[6] Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET [J].

Hino, Shiro ;

Ito, Masanao ;

Miura, Naruhisa ;

Imaizumi, Masayuki ;

Yamakawa, Satoshi .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :963-+

[7] Improvement of interface state and channel mobility using 4H-SiC (0-33-8) face [J].

Hiyoshi, Toru ;

Masuda, Takeyoshi ;

Wada, Keiji ;

Harada, Shin ;

Namikawa, Yasuo .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :506-509

[8] 4H-SiC Trench MOSFET with Bottom Oxide Protection [J].

Kagawa, Yasuhiro ;

Fujiwara, Nobuo ;

Sugawara, Katsutoshi ;

Tanaka, Rina ;

Fukui, Yutaka ;

Yamamoto, Yasuki ;

Miura, Naruhisa ;

Imaizumi, Masayuki ;

Nakata, Shuhei ;

Yamakawa, Satoshi .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :919-+

[9] Shape Control and Roughness Reduction of SiC Trenches by High-Temperature Annealing [J].

Kawada, Yasuyuki ;

Tawara, Takeshi ;

Nakamura, Shun-ichi ;

Tamori, Tae ;

Iwamuro, Noriyuki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (11)

[10] Deep levels induced by reactive ion etching in n- and p-type 4H-SiC [J].

Kawahara, Koutarou ;

Krieger, Michael ;

Suda, Jun ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (02)

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