Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiation

被引:10
作者
Yavlinskii, YN [1 ]
机构
[1] IV Kurchatov Atom Energy Inst, Russian Res Ctr, Moscow 123182, Russia
关键词
swift multicharged ion; excited electrons; exciton; expansion of electron-hole plasma; point defect;
D O I
10.1016/S0168-583X(99)00736-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A heavy, multicharged ion moving in a solid interacts with nuclei and electrons of the matter atoms. If the projectile velocity exceeds the typical orbital velocity of the target electrons, the main process is excitation of the electronic subsystem, i.e., excitation and ionization of bound electrons. Initially, relaxation of the electron excitations results from electronic processes alone, and energy transfer from electrons to lattice happens later. Since free charge carriers are absent in insulators before irradiation, the motion of the excited electrons is possible only together with holes. Due to inner pressure of the electron-hole plasma the expansion takes place. The velocity of the expansion is determined by the heat velocity of electron-hole pairs, As the excitation region expands, the density of the electron-hole pairs decreases, the average distance between pairs increases, and excitons are produced. The expansion can be terminated in the time t similar or equal to 10(-13) s, when, due to the electron-phonon interaction, self-trapped holes (and excitons) are formed. The annihilation of the trapped excitons gives rise to Frenkel defects. The set of equations comprising the continuity equation, the Euler equation and energy conservation is considered. The analytic dependence on time of the electron temperature and the radius of the excitation region is derived. The observation of projectile traces in a target is discussed in the single projectile regime. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:35 / 39
页数:5
相关论文
共 17 条
[1]  
[Anonymous], 1988, SOV PHYS USP, DOI DOI 10.1070/PU1988V031N11ABEH005646
[2]   PHOTOELECTRON DETERMINATION OF ATTENUATION OF LOW-ENERGY ELECTRONS IN AL2O3 [J].
BATTYE, FL ;
JENKIN, JG ;
LIESEGANG, J ;
LECKEY, RCG .
PHYSICAL REVIEW B, 1974, 9 (07) :2887-2893
[3]  
CHIBISOV MI, 1965, ZH TECH FIZIKI, V35, P123
[4]   EFFECTS INDUCED BY HIGH ELECTRONIC EXCITATIONS IN PURE METALS - A DETAILED STUDY IN IRON [J].
DUNLOP, A ;
LESUEUR, D ;
LEGRAND, P ;
DAMMAK, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4) :330-338
[5]   Excitonic model of track registration of energetic heavy ions in insulators [J].
Itoh, N ;
Stoneham, AM .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 146 (1-4) :362-366
[6]  
Katin V. V., 1991, Soviet Physics - Technical Physics, V36, P40
[7]  
Katin V. V., 1989, Soviet Physics - Technical Physics, V34, P1422
[8]   Subpicosecond study of carrier trapping dynamics in wide-band-gap crystals [J].
Martin, P ;
Guizard, S ;
Daguzan, P ;
Petite, G ;
DOliveira, P ;
Meynadier, P ;
Perdrix, M .
PHYSICAL REVIEW B, 1997, 55 (09) :5799-5810
[9]   Scanning force microscopy of heavy-ion tracks in lithium fluoride [J].
Müller, A ;
Neumann, R ;
Schwartz, K ;
Trautmann, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 146 (1-4) :393-398
[10]   Scanning probe microscopy of ion-irradiated materials [J].
Neumann, R .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 151 (1-4) :42-55