Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

被引：9

作者：

Tang, C. J. ^{[1
,2
,3
,4
]}

Gu, L. P. ^{[1
]}

Gracio, J. ^{[2
,3
]}

Ribeiro, J. L. ^{[5
]}

机构：

[1] Changshu Inst Technol, Jiangsu Key Lab Adv Funct Mater, Changshu 215500, Peoples R China

[2] Univ Aveiro, TEMA, P-3810193 Aveiro, Portugal

[3] Univ Aveiro, Dept Mech Engn, P-3810193 Aveiro, Portugal

[4] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

[5] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 12期

关键词：

POLYCRYSTALLINE DIAMOND; THIN-FILMS; GROWTH; MICROCRYSTALLINE; NITROGEN; SPECTROSCOPY; MORPHOLOGY; KINETICS; SURFACE; CARBON;

D O I：

10.1002/pssa.200925147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we study the influence of oxygen additive in the gas phase on hydrogen impurity incorporation into thick nanocrystalline diamond (NCD) films. Various diamond samples were grown on large silicon wafers of 5.08 cm diameter by adjusting the amount of oxygen and nitrogen additives into a conventional CH4/H-2 plasma while keeping the other parameters constant using a 5-kW microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The morphology, crystalline quality, and hydrogen impurity content of the produced diamond samples were characterized using scanning electron microscopy, micro-Raman spectroscopy, and Fourier transform infrared (FTIR) spectroscopy, respectively. The Raman and the FTIR spectra of the diamond samples indicate that on increasing the amount of oxygen additive in the gas phase, the crystalline quality of the NCD films is significantly enhanced, while their bonded hydrogen content decreases drastically. We conclude that a small amount of oxygen addition has an enhancement effect on the overall quality of diamond films ranging from polycrystalline to nanocrystalline in two ways: improving the diamond crystalline quality and suppressing hydrogen impurity incorporation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2816 / 2821

页数：6

共 35 条

[1] INFLUENCE OF GAS-PHASE PARAMETERS ON THE DEPOSITION KINETICS AND MORPHOLOGY OF THIN DIAMOND FILMS DEPOSITED BY HFCVD AND MWCVD TECHNIQUE [J].

BECKMANN, R ;

KULISCH, W ;

FRENCK, HJ ;

KASSING, R .

[2] Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth [J].

Birrell, James ;

Gerbi, J. E. ;

Auciello, O. A. ;

Carlisle, J. A. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (32) :S1771-S1776

[3]

BUTLER JE, 2003, NANOTECHNOLOGY, V1, P474

[4] Growth of highly transparent nanocrystalline diamond films and a spectroscopic study of the growth [J].

Chen, LC ;

Kichambare, PD ;

Chen, KH ;

Wu, JJ ;

Yang, JR ;

Lin, ST .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) :753-759

[5] The role of methyl radicals and acetylene in [100] vs. [111] diamond growth [J].

D'Evelyn, MP ;

Graham, JD ;

Martin, LR .

[6] HYDROGEN IN POLYCRYSTALLINE DIAMOND - AN INFRARED-ANALYSIS [J].

DISCHLER, B ;

WILD, C ;

MULLERSEBERT, W ;

KOIDL, P .

PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :217-221

[7] PREPARATION OF SMOOTH AND NANOCRYSTALLINE DIAMOND FILMS [J].

ERZ, R ;

DOTTER, W ;

JUNG, K ;

EHRHARDT, H .

[8] MODEL OF THE COMPETITIVE GROWTH OF AMORPHOUS-CARBON AND DIAMOND FILMS [J].

FORD, IJ .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (01) :510-513

[9] DETAILED SURFACE AND GAS-PHASE CHEMICAL-KINETICS OF DIAMOND DEPOSITION [J].

FRENKLACH, M ;

WANG, H .

PHYSICAL REVIEW B, 1991, 43 (02) :1520-1545

[10] FULLERENES AS PRECURSORS FOR DIAMOND FILM GROWTH WITHOUT HYDROGEN OR OXYGEN ADDITIONS [J].

GRUEN, DM ;

LIU, SZ ;

KRAUSS, AR ;

LUO, JS ;

PAN, XZ .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1502-1504

← 1 2 3 4 →