Dielectric enhancement of excitons in semiconducting quantum wires

被引:14
|
作者
Mulyarov, EA
Tikhodeev, SG
机构
[1] Institute of General Physics, Russian Academy of Sciences
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.558144
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The energy of the exciton ground state in a semiconducting cylindrical quantum wire surrounded by a dielectric has been calculated using a variational technique accounting for the effect of dielectric enhancement. The effect of dielectric enhancement in such a system has been clearly demonstrated. Exciton parameters have been calculated for an intercalated leadiodide-based quasi-one-dimensional semiconductor and GaAs wires in asbestos nanotubes. (C) 1997 American Institute of Physics.
引用
收藏
页码:151 / 155
页数:5
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