Localized magnetic polarons in diluted magnetic semiconductors

被引:9
|
作者
Hagston, WE [1 ]
Stirner, T [1 ]
Miao, J [1 ]
机构
[1] UNIV HULL, DEPT PHYS, KINGSTON UPON HULL HU6 7RX, N HUMBERSIDE, ENGLAND
关键词
D O I
10.1063/1.366426
中图分类号
O59 [应用物理学];
学科分类号
摘要
A theory of localized magnetic polarons in diluted magnetic semiconductors is developed. The theory involves below band gap states and alloy fluctuations utilizing the optimal fluctuation method. A comparison of the theoretical calculations with published experimental results is performed. The implications of the comparison are discussed and the need for extending the theory to include an additional impurity/native lattice defect potential described. The magnetic field and temperature dependence of the polaron energies are also evaluated. (C) 1997 American Institute of Physics.
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页码:5653 / 5657
页数:5
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